教育经历
2009.09---2014.06，吉林大学电子科学与工程学院，微电子学与固体电子学，理学博士
2011.11---2013.10，美国伦斯勒理工学院，凝聚态物理专业，联合培养博士生
2007.09---2009.07，吉林大学电子科学与工程学院，微电子学与固体电子学，理学硕士
2003.09---2007.07，吉林大学电子科学与工程学院，微电子学，理学学士
工作经历
2024.10---至今，东北大学，信息科学与工程学院，电子科学与技术系，副教授
2019.09---2024.09，中国科学院长春光学精密机械与物理研究所，发光学及应用国家重点实验室，副研究员
2014.07---2019.08，中国科学院长春光学精密机械与物理研究所，发光学及应用国家重点实验室，助理研究员
研究方向
本人专注于利用量子力学方法计算研究宽禁带半导体、低维半导体材料与器件中的一系列基本物理问题。这些基本物理问题直面半导体器件实际开发中最核心的关键科学问题。通过揭示凝聚态物质中的载流子激发、输运等能量转换过程，实现有效调控新型半导体材料以获得最优异性质，促进前沿半导体材料的开发与应用。具体研究方向包括：
1.宽禁带半导体中缺陷、掺杂特性的表征及调控；
2.低维半导体材料原子结构和电子性质的理论研究；
3.半导体材料中激发态载流子动力学过程的理论模拟；
招收博士/硕士方向
欢迎控制科学与工程、电子科学与技术、凝聚态物理等相关专业学生报考硕士/博士研究生。
科研项目
1. 2025/01-2028/12，国家自然科学基金面上项目，No.12474079，“碱金属掺杂二维少层氧化锌半导体及其自补偿效应研究”，主持。
2. 2020/01-2023/12，国家自然科学基金面上项目，No.11974344，“二维少层氧化锌半导体光电性质及掺杂特性研究”，主持。
3. 2016/01-2018/12，国家自然科学基金青年科学基金项目，No.11504368，“掺杂调控II-VI族宽禁带半导体及衍生四元半导体中本征深能级的研究”，主持。
4. 2017/01-2017/12，国家自然科学基金国际(地区)合作与交流项目，No.61791240184，“国际理论物理中心光诱导电子激发光谱和动力学研讨会”，主持。
5. 2023/01-2025/12，吉林省自然科学基金面上项目，No. 20230101004JC，“二维少层氧化锌半导体表面分子吸附电荷转移掺杂基础研究”，主持。
6.2020/11-2022/10，集成光电子学国家重点实验室开放课题，No.IOSKL2020KF07，“二维氧化锌晶体结构、本征缺陷对光电性质影响的研究”，主持。
学术成果
期刊论文(部分)
1.Dong Han, Xian-Bin Li, Nian-Ke Chen, Dan Wang, Sheng-Yi Xie, Xue-Jiao Chen, and De-Zhen Shen, “Thickness-dependent atomic structures of two-dimensional few-layer ZnO: A density functional theory study”, Phys. Rev. B 109, 014105 (2024).
2.Dong Han, Xian-Bin Li, Dan Wang, Nian-Ke Chen, and Xi-Wu Fan, “Doping in the two-dimensional limit: p/n-type defects in monolayer ZnO”, Phys. Rev. B 105, 024104 (2022).
3.Dong Han, Y.-Y. Sun, Junhyeok Bang, Y.-Y. Zhang, Hong-Bo Sun, Xian-Bin Li, S. B. Zhang, “Deep electron traps and origin of p-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4”, Phys. Rev. B 87, 155206 (2013).
4.Dong Han, Damien West, Xian-Bin Li, Sheng-Yi Xie, Hong-Bo Sun, S. B. Zhang, “Impurity doping in SiO2: Formation energies and defect levels from first-principles calculations”, Phys. Rev. B 82, 115132 (2010).
5.Dong Han, Junhyeok Bang, Weiyu Xie, Vincent Meunier, and Shengbai Zhang, “Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction”, J. Phys. Chem. Lett. 7, 3548 (2016).
6.Dong Han, Xue-Jiao Chen, Hai Xu, Chen Jiao, Ji-Lian Xu, Ke-Xue Li, Lei Liu, Yao-Biao Li, and De-Zhen Shen, “Stretch/Compress-Modulated Spin Splitting in One-Dimensional Melem Chain with a Helical Structure”, Phys. Status Solidi RRL 13, 1900294 (2019).
7.Dong Han, Xian-Bin Li, Y.-Y. Sun, S.-B. Zhang, Sheng-Yi Xie, Sukit Limpijumnong, Zhan-Guo Chen, Hong-Bo Sun, “Role of Hydrogen in the Growth of Boron Nitride: Cubic Phase versus Hexagonal Phase”, Comput. Mater. Sci. 82, 310 (2014).
8.Hai Xu, Dong Han(共同一作), Yang Bao, Fang Cheng, Zijing Ding, Sherman J. R. Tan, and Kian Ping Loh, “Observation of Gap Opening in 1T’ Phase MoS2 Nanocrystals”, Nano Lett. 18, 5085 (2018).
9.Dan Wang, Dong Han(共同一作), Damien West, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Vincent Meunier, Shengbai Zhang and Xian-Bin Li, “Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport”, NPJ Comput. Mater. 5, 8 (2019).
10.Pengtao Jing, Dong Han(共同一作), Di Li, Ding Zhou, Dezhen Shen, Guanjun Xiao, Bo Zou, Songnan Qu, “Surface Related Intrinsic Luminescence from Carbon Nanodots: Solvent Dependent Piezochromism”,Nanoscale Horiz. 4, 175 (2019).
11.Nian-Ke Chen, Dong Han(共同一作), Xian-Bin Li, Feng Liu, Junhyeok Bang, Xue-Peng Wang, Qi-Dai Chen, Hai-Yu Wang, Shengbai Zhang, and Hong-Bo Sun, “Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation”, Phys. Chem. Chem. Phys. 19, 24735 (2017).
12.Chunrui Ma, Dong Han(共同一作), Ming Liu, Gregory Collins, Haibin Wang, Xing Xu, Yuan Lin, Jiechao Jiang, Shengbai Zhang, and Chonglin Chen, “Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3”, Sci. Rep. 6, 37337 (2016).
13.Sheng Cheng, Jiangbo Lu, Dong Han(共同一作), Ming Liu, Xiaoli Lu, Chunrui Ma, Shengbai Zhang, and Chonglin Chen, “Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films”, Sci. Rep. 6, 37496 (2016).
14.Xue-Jiao Chen, Dong Han(通信作者), Ying Su, Qinghui Zeng, Lei Liu, and D.-Z. Shen, “Structural and Electronic Properties of Inorganic Mixed Halide Perovskites”, Phys. Status Solidi RRL 12, 1800193 (2018).
15.Dan Wang, Dong Han, Xian-Bin Li, Nian-Ke Chen, Damien West, Vincent Meunier, Shengbai Zhang, and Hong-Bo Sun, “Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus”, Phys. Rev. B 96, 155424 (2017).
16.Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, Wei Quan Tian, Damien West, Hong-Bo Sun, and S. B. Zhang, “Determination of Formation and Ionization Energies of Charged Defects in Two-Dimensional Materials”, Phys. Rev. Lett. 114, 196801 (2015).
17.Di Li, Dong Han, Song-Nan Qu, Lei Liu, Peng-Tao Jing, Ding Zhou, Wen-Yu Ji, Xiao-Yun Wang, Tong-Fei Zhang, and De-Zhen Shen, “Supra-(carbon nanodots) with a strong visible to near-infrared absorption band and efficient photothermal conversion”, Light: Sci. Appl. 5, e16120 (2016).
获奖
[1] 2018年，吉林省自然科学学术成果奖三等奖，排名第二
联系方式
邮箱：hand#mail.neu.edu.cn
